PART |
Description |
Maker |
NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6 Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
KDR367E |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
KDR400S |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(HIGH FREQUENCY RECTIFICATION, SWITCHING SUPPLY)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
KDR368E |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
MPE-29G |
90V0A,Schottky Barrier Diodes(90V0A,肖特基势垒二极管) 20 A, SILICON, RECTIFIER DIODE Power Surface Mount 90V, 20A Schottky barrier diode in TO220S package
|
Sanken Electric Co., Ltd. SANKEN[Sanken electric]
|
KDR105 |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(HIGH FREQUENCY RECTIFICATION)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)] KEC Holdings
|
KDR505S |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(HIGH FREQUENCY RECTIFICATION)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
NTHD3133PF NTHD3133PFT1G NTHD3133PFT3G |
-20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET Power MOSFET and Schottky Diode -20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET垄芒
|
ON Semiconductor
|
B5A60VIC B5A60 |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE STACK (SWITCHING TYPE POWER SUPPLY, CONVERTER & CHOPPER)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
SB01-15NP SB01-15NP-E |
150V, 100mA Rectifier Shottky Barrier Diode Schottky Barrier Diode DIODE SCHOTTKY 150V 0.1A 3NP
|
Sanyo Semiconductor SANYO[Sanyo Semicon Device]
|
BAT750 BAT75008 BAT750TA |
Discrete - Rectifiers (0.5A and higher) - Schottky / SBR Rectifiers 0.75A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER SOT23 Schottky barrier diode
|
Diodes Incorporated Zetex Semiconductors
|